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SLF16N65S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SLF16N65S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 155 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 37 nC
   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.51 Ohm
   Paquete / Cubierta: TO220F
 

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SLF16N65S Datasheet (PDF)

 ..1. Size:2141K  maple semi
slf16n65s.pdf pdf_icon

SLF16N65S

SLF16N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 16A*, 650V, RDS(on),typ =0.42planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 37nC)has been especially tailored to minimize conduction loss, pro- Fast switchingvide superior switching performance, and withstand high en-

 8.1. Size:1321K  maple semi
slp16n50c slf16n50c.pdf pdf_icon

SLF16N65S

SLP16N50C / SLF16N50C500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 16A, 500V, RDS(on)typ. = 305m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 52nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

 8.2. Size:938K  maple semi
slp16n50s slf16n50s.pdf pdf_icon

SLF16N65S

SLP16N50S / SLF16N50S500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 16A, 500V, RDS(on) = 280m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 31nC)This advanced technology has been especially tailored - Low Crss ( typical 6.8pF)to minimize on-state resistance, provide superior switching - High rug

Otros transistores... SLD8N50UD , SLD8N65SV , SLD90N02TB , SLD90N03TB , SLD95R3K2GTZ , SLE65R1K2E7 , SLF10N65SV , SLF12N65SV , 7N65 , SLF95R760GTZ , SLH10RN20T , SLH60R043E7D , SLH60R075GTDI , SLH65R180E7C , SLH95R130GTZ , SLI13N50C , MD100N20 .

History: SLH10RN20T | MD25N50 | SLF95R760GTZ | MDT30P10D | MD50N20

 

 
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History: SLH10RN20T | MD25N50 | SLF95R760GTZ | MDT30P10D | MD50N20

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