DMN2600UFB Todos los transistores

 

DMN2600UFB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN2600UFB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 1.3 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 70.13 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
   Paquete / Cubierta: X1DFN10063
 

 Búsqueda de reemplazo de DMN2600UFB MOSFET

   - Selección ⓘ de transistores por parámetros

 

DMN2600UFB Datasheet (PDF)

 ..1. Size:139K  diodes
dmn2600ufb.pdf pdf_icon

DMN2600UFB

DMN2600UFB25V N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: DFN1006-3 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminals:

 9.1. Size:325K  diodes
dmn26d0udj.pdf pdf_icon

DMN2600UFB

DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Dual N-Channel MOSFET V(BR)DSS RDS(on) TA = +25C Low On-Resistance: 3.0 @ VGS= 4.5V 240mA 3.0@ 4.5V 20V 180mA 6.0 @ VGS= 1.8V 4.0@ 2.5V 6.0@1.8V 10@1.5V Description Very Low Gate Threshold Voltage, 1.05V Max This new

 9.2. Size:145K  diodes
dmn26d0ut.pdf pdf_icon

DMN2600UFB

DMN26D0UTN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance: Case: SOT-523 3.0 @ 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 4.0 @ 2.5V Moisture Sensitivity: Level 1 per J-STD-020 6.0 @ 1.8V

 9.3. Size:122K  diodes
dmn26d0ufb4.pdf pdf_icon

DMN2600UFB

DMN26D0UFB4N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data N-Channel MOSFET Case: DFN1006H4-3 Low On-Resistance: Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 3.0 @ 4.5V Moisture Sensitivity: Level 1 per J-STD-020 4.0 @ 2.5V Terminal Connections: See Diag

Otros transistores... DMG4800LFG , DMG4800LK3 , DMG4800LSD , DMG4822SSD , DMG6402LDM , DMG8880LK3 , DMG8880LSS , DMN100 , RFP50N06 , DMN3005LK3 , DMN3007LSS , DMN3010LSS , DMN3020LK3 , DMN3024LK3 , DMN3024LSD , DMN3024LSS , DMN3030LSS .

 

 
Back to Top

 


 
.