MPG100N03P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MPG100N03P  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: TO220

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MPG100N03P datasheet

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 mpg100n03p.pdf pdf_icon

MPG100N03P

Silicon N-Channel Power MOSFET Description The MPG100N03 uses advanced technology and design to provide excellent R . It can be used in a wide variety of DS(ON) applications. General Features V =30V, I =100A DS D Low ON Resistance Low Reverse transfer capacitances Schematic diagram 100% Single Pulse avalanche energy Test Application Power switching application A

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 mpg100n06 mdt100n06 mps100n06.pdf pdf_icon

MPG100N03P

Green Product MPG100N06 60VN-Channel Power MOSFET DESCRIPTION KEYCHARACTERISTICS V =60V,I =100A DS D The MPG100N06 uses advanced trench technology to provide R

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MPG100N03P

DESCRIPTION The MPG100N07P uses advanced trench technology to provide excellent R , low gate DS(ON) charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Schematic diagram V = 70V,I = 100A DS D R

 6.3. Size:967K  cn minos
 mpg100n06p mpg100n06s.pdf pdf_icon

MPG100N03P

Silicon N-Channel Power MOSFET Description The MPG100N06 uses advanced trench technology to provide excellent R , low gate charge. It can be DS(ON) used in a wide variety of applications. KEY CHARACTERISTICS V =60V,I =100A R

MOSTRAR MÁS

Otros transistores... MD50N50, MDT35P10D, MDT40P10D, MDT80N06D, MP13N50, MP5N50, MPF4N65, MPF7N65, 4N60, MPG100N06, MDT100N06, MPS100N06, MPG160N04P, MPG30P10P, MPG40P10P, MPG50N06P, MPG55N06P