AO3400S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DescriptionThe AO3400S combines advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltage as low as 2.5V. This device issuitable for use as a load switch or other generalapplications.FeaturesVDS=30V, ID=5.1ARDS(ON)

AO340030V N-Channel Enhancement Mode MOSFETVDS= 30V RDS(ON), Vgs@10V, Ids@5.8A

AO3400N-Channel 30V(D-S) MOSFETDESCRIPTION The 3400 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @ 2.5V (Typ) @ 1

AO3400A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3400A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 5.7Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

AO3400C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=4.5V) 6.2A Low Gate Charge RDS(ON) (at VGS=10V)

AO340030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3400 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 5.8Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3400AO3400N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3400 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and ID = 4.8 A (VGS = 10V)operation with gate voltages as low as 2.5V. This RDS(ON)

AO3400 Rev.B Oct.-2017 DATA SHEET / Descriptions SOT23-3 N MOS N- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON)

SMD Type ICSMD Type MOSFETN-Channel Enhancement ModeField Effect TransistorKO3400(AO3400)SOT-23Unit: mm+0.1Features 2.9-0.1+0.10.4-0.1VDS (V) = 30V3ID =5.8 A(VGS =10V)RDS(ON) 28m (VGS = 10V)12RDS(ON) 33m (VGS =4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1RDS(ON) 52m (VGS =2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maxim

SMD Type MOSFETN-Channel MOSFETAO3400A (KO3400A)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features VDS (V) = 30V ID = 5.7 A (VGS = 10V)1 2 RDS(ON) 26.5m (VGS = 10V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 RDS(ON) 32m (VGS = 4.5V) RDS(ON) 48m (VGS = 2.5V)1. Gate2. Source3. DrainDDG GSS Absolute

SMD Type ICSMD Type MOSFETN-Channel Enhancement MOSFETAO3400 (KO3400)SOT-23-3Unit: mm+0.22.9 -0.1Features+0.10.4-0.13VDS (V) = 30VID = 5.8 A (VGS = 10V)RDS(ON) 28m (VGS = 10V)1 2RDS(ON) 33m (VGS = 4.5V)+0.02+0.10.15 -0.020.95 -0.1RDS(ON) 52m (VGS = 2.5V) D+0.11.9 -0.21. Gate2. SourceGS 3. DrainAbsolute Maximum Ratings Ta = 25Parameter Sy

SMD Type MOSFETN-Channel MOSFETAO3400A (KO3400A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 5.7 A (VGS = 10V) RDS(ON) 26.5m (VGS = 10V) 1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 32m (VGS = 4.5V)+0.11.9 -0.2 RDS(ON) 48m (VGS = 2.5V)1. Gate2. SourceDD3. DrainG GSS Absol

SMD Type ICSMD Type MOSFETN-Channel Enhancement ModeField Effect TransistorAO3400 (KO3400)SOT-23Unit: mm+0.1Features 2.9 -0.1+0.10.4 -0.1VDS (V) = 30V3ID = 5.8 A (VGS = 10V)RDS(ON) 28m (VGS = 10V)1 2RDS(ON) 33m (VGS = 4.5V)+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1RDS(ON) 52m (VGS = 2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAb

RUMWUMW AO3400AUMW AO3400AN-Channel Enhancement ModeFeaturesSOT23 VDS (V) = 30VID = 5.8 A (VGS = 10V)RDS(ON) 28m (VGS = 10V)RDS(ON) 33m (VGS = 4.5V)RDS(ON) 52m (VGS = 2.5V)1. GATE 2. SOURCE 3. DRAIN Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 30 VGate-Source Voltage VGS 12 VContinuous Drain Current TA=25 5.8ID

AO3400AMOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max UnitDrain-Source Voltage BV 30 VDSSGate- Source VoltageV +12 VGSDrain Current (continuous) 5.8 AIDDrain Current (pulsed) I 30 ADMTotal Device Dissipat

Plastic-Encapsulate MosfetsAO3400FEATURESN-Channel MOSFETThe AO3400 is the N-Channel logic enhancement mode powerfield effect transistor is produced using high cell density, DMOStrench technology.This high-density process is especially tailored to minimize on-stateresistance. These devices are particularly suited for low voltage applicationsuch as cellular phone and notebook c

AO3400A N-Ch 30V Fast Switching MOSFETs Description Product Summary The AO3400A is the high cell density trenched N-VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 27 m and load switch applications. ID 5.2 A The AO3400A meet the RoHS and Green Product requirement with full function reliability approve

www.msksemi.comAO3400MI-MSSemiconductor CompianceSOT-23FEATURE High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability1. GATE2. SOURCEAPPLICATION3. DRAIN Load/Power Switching Interfacing SwitchingEquivalent CircuitIV(BR)DSS RDS(on)MAX D35m@ 10V40m@4.5V30 V5.8A52m@2.5VMaximum ratin

AO3400 30V N-Channel Enhancement Mode MOSFETVDS= 30V RDS(ON), Vgs@10V, Ids@5.8A

N-Channel Enhancement Mode MOSFET Feature SC-59 30V/5.8A, RDS(ON) = 35m(MAX) @VGS = 10V. 3 RDS(ON) =40m(MAX) @VGS = 4.5V. RDS(ON) =55m(MAX) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON) . 2 Reliable and Rugged. 1 SC-59 for Surface Mount Package. Applications 1Gate 2Source 3Drain Power Management Portable Equipment and

AO3400AO3400AO3400AO3400SI2305SOT-23 Plastic-Encapsulate MOSFETS N-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect TransistorN-Channel Enhancement Mode Field Effect TransistorAO3400AO3400AO3400AO3400AO3400FEATURE High dense cell design for extremely low RDS(ON) Excepti

AO3400www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1