AO3401S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DescriptionThe AO3401S combines advanced trench technologyto provide excellent RDS(ON), low gate charge andoperation with gate voltage as low as 2.5V. This device issuitable for use as a load switch or other generalapplications.Features VDS= -30V, ID= -4.2ASchematic DiagramRDS(ON)typ. =45m@VDS=-10VRDS(ON)typ. =51m@VDS=-4.5VRDS(ON)typ. =65m@VDS=-2.5V Low gate

AO340130V P-Channel Enhancement Mode MOSFETV = -30V DSR , V DS(ON) gs@-10V, Ids@-4.2A

AO3401P-Channel 30V(D-S) MOSFETDESCRIPTION DThe AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) RDS(ON) ID @4.5V (Typ) @ 2.5V (Typ) @ 10V (Typ)

AO340130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3401 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -4.0Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

AO3401A30V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3401A uses advanced trench technology toprovide excellent RDS(ON) , low gate charge and operation ID (at VGS=-10V) -4.0Agate voltages as low as 2.5V. This device is suitable for RDS(ON) (at VGS=-10V)

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3401AO3401P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO3401 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), low gate charge and ID = -4.0 A (VGS = -10V)operation with gate voltages as low as 2.5V. This RDS(ON)

AO3401 Rev.A Aug.-2016 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON)

SMD Type MOSFETP-Channel Enhancement MOSFETAO3401 HF (KO3401 HF)SOT-23-3Unit: mm+0.22.9 -0.1 Features+0.10.4-0.1 VDS (V) =-30V 3 ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) RDS(ON) 65m (VGS =-4.5V) 1 2D+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 120m (VGS =-2.5V)+0.11.9 -0.2G1. GateS2. Source3. Drain A

SMD Type MOSFETP-Channel Enhancement MOSFET AO3401 (KO3401)SOT-23-3Unit: mm+0.22.9 -0.1 Features+0.10.4-0.1 VDS (V) =-30V 3 ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) RDS(ON) 65m (VGS =-4.5V) 1 2D+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 120m (VGS =-2.5V)+0.11.9 -0.2G1. GateS2. Source3. Drain Absolu

SMD Type MOSFETP-Channel Enhancement MOSFET AO3401 (KO3401)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.1 Features3 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V)1 2+0.1 RDS(ON) 65m (VGS =-4.5V) +0.050.95 -0.1 0.1 -0.01D+0.11.9 -0.1 RDS(ON) 120m (VGS =-2.5V)1. GateG2. SourceS3. Drain Absolute M

SMD Type MOSFETP-Channel Enhancement MOSFET AO3401 (KO3401)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.1 Features3 VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 50m (VGS =-10V)1 2+0.1 RDS(ON) 65m (VGS =-4.5V) +0.050.95 -0.1 0.1 -0.01D+0.11.9 -0.1 RDS(ON) 120m (VGS =-2.5V)1. GateG2. SourceS3. Drain Absolute M

SMD Type MOSFETP-Channel MOSFETAO3401A (KO3401A)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 VDS (V) =-30V ID =-4 A (VGS =-10V) RDS(ON) 50m (VGS =-10V) 1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 60m (VGS =-4.5V)+0.11.9-0.1 RDS(ON) 85m (VGS =-2.5V)1. Gate2. SourceD3. DrainGS Absolute Maximum Ratings T

SMD Type MOSFETP-Channel MOSFETAO3401A (KO3401A)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) =-30V ID =-4 A (VGS =-10V)1 2 RDS(ON) 50m (VGS =-10V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 60m (VGS =-4.5V)1.9 -0.2 RDS(ON) 85m (VGS =-2.5V)1. Gate2. SourceD3. DrainGS Absolute Maximum R

RUMWpeUMW AO3401AUMW AO3401AM SFETSMD TyP-Channel Enhancement MOSFETSOT23 Features VDS (V) =-30V ID =-4.2 A (VGS =-10V) RDS(ON) 55m (VGS =-10V) RDS(ON) 70m (VGS =-4.5V) RDS(ON) 120m (VGS =-2.5V)1. GATE 2. SOURCE 3. DRAIN DGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage V

AO3401AMOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max Unit-30Drain-Source Voltage BV VDSSGate- Source VoltageV VGS +12Drain Current (continuous)I -4.2 ADDrain Current (pulsed) I ADM-18Total Device D

Plastic-Encapsulate MosfetsAO3401P-Channel MOSFETFEATURESHigh dense cell design for extremely low RDS(ON).Exceptional on-resistance and maximum DC current capabilityD 1.Gate2.SourceSOT-233.DrainG S MARKING:A19TMaximum ratings ( Ta=25 unless otherwise noted) UnitParameter Symbol Value Drain-Source Voltage VDS -30 VGate-Source Voltage VGS 12 VContinuous

AO3401A P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The AO3401A is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON RDS(ON),typ 54 m and efficiency for most of the small power switching and load switch applications. ID -4.2 A The AO3401A meet the RoHS and Green Product requirement with full function reliability approv

AO3401 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V P-Channel MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 44m@-10V 1. GATE -4.2A -30V 2. SOURCE 51m@4.5V 1 3. DRAIN 2 FEATURE APPLICATION Load/Power Switching High dense cell design for extremely low RDS(ON) Interfacing SwitchingExceptional on-resistance and maximum DC current capabilityMARKING Equivalen

www.msksemi.comAO3401MI-MSSemiconductor CompianceFEATURESOT-23-33 High dense cell design for extremely low R .DS(ON) Exceptional on-resistance and maximum DC currentcapability1. GATE 12APPLICATION2. SOURCE Load/Power Switching3. DRAIN Interfacing SwitchingEquivalent CircuitIV(BR)DSS RDS(on)MAX D65m@-10V75m@-4.5V-30 V-4.2A90m@-2.5V

AO3401 -30V P-Channel Enhancement Mode MOSFETV = -30V DSR , V DS(ON) gs@-10V, Ids@-4.2A

P-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Feature SC-59 -30V/-4.2A, RDS(ON) =55m(MAX) @VGS = -10V. = RDS(ON) = 70m(MAX) @VGS = -4.5V. GS RDS(ON) =120m(MAX) @VGS = -2.5V. GSSuper High dense cell design for extremely low RSuper High dense cell design for extremely low RDS(ON) Reliable and Rugged SC-59 for Surface Mount Package Applications

AO3401P-Channel 20-V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-23-3L90 m@-4.5V-20VA-3110 m@-2.5V1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION TrenchFET Power MOSFET zz Load Switch for Portable Devices z DC/DC Converter MARKING : A19T Equivalent Circuit Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source V

SI2305AO3401AO3401AO3401SOT-23 Plastic-Encapsulate MOSFETS FEATURES

AO3401www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

AO3401Awww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)