MD20N65 Todos los transistores

 

MD20N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MD20N65
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 85 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm
   Paquete / Cubierta: TO3P
 

 Búsqueda de reemplazo de MD20N65 MOSFET

   - Selección ⓘ de transistores por parámetros

 

MD20N65 Datasheet (PDF)

 ..1. Size:1030K  cn minos
 md20n65.pdf pdf_icon

MD20N65

Silicon N-Channel Power MOSFETDescriptionMD20N65,the silicon N-channel Enhanced MOSFETs,is obtainedby advanced MOSFET technology which reduce the conduction lossimprove switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching andgeneral purpose applications.KEY CHARACTERISTICS V =650V, R

 8.1. Size:655K  cn minos
 md20n60.pdf pdf_icon

MD20N65

DescriptionMD20N60,the silicon N-channel Enhanced MOSFETs,is obtainedby advanced MOSFET technology which reduce the conduction lossimprove switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching andgeneral purpose applications.KEY CHARACTERISTICSParameter Value UnitVDS@Tj.max 600 VID 20 ARDS(ON).TyP 0.39

 9.1. Size:808K  cn vbsemi
 cmd20n06l.pdf pdf_icon

MD20N65

CMD20N06Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

 9.2. Size:877K  cn minos
 md20n50.pdf pdf_icon

MD20N65

Silicon N-Channel Power MOSFETDescriptionMD20N50 the silicon N-channel Enhanced MOSFETs, is obtainedby advanced MOSFET technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching andgeneral purpose applications.General FeaturesV =500V, R

MOSTRAR MÁS

Otros transistores... MPT65N08 , MPT65N08S , P80NF70 , AO3400S , AO3401S , IRLR024NTR , K3878 , MD20N60 , 60N06 , MD23N50 , MD33N25 , MD40N25 , MD9N90 , MDP18N20 , MDP2N60 , MDP5N65 , MDP9N20 .

 

 
Back to Top

 


 
.