MD20N65 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MD20N65  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 85 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm

Encapsulados: TO3P

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MD20N65 datasheet

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 md20n65.pdf pdf_icon

MD20N65

Silicon N-Channel Power MOSFET Description MD20N65,the silicon N-channel Enhanced MOSFETs,is obtained by advanced MOSFET technology which reduce the conduction loss improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS V =650V, R

 8.1. Size:655K  cn minos
 md20n60.pdf pdf_icon

MD20N65

Description MD20N60,the silicon N-channel Enhanced MOSFETs,is obtained by advanced MOSFET technology which reduce the conduction loss improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit VDS@Tj.max 600 V ID 20 A RDS(ON).TyP 0.39

 9.1. Size:808K  cn vbsemi
 cmd20n06l.pdf pdf_icon

MD20N65

CMD20N06L www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

 9.2. Size:877K  cn minos
 md20n50.pdf pdf_icon

MD20N65

Silicon N-Channel Power MOSFET Description MD20N50 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =500V, R

MOSTRAR MÁS

Otros transistores... MPT65N08, MPT65N08S, P80NF70, AO3400S, AO3401S, IRLR024NTR, K3878, MD20N60, IRFZ48N, MD23N50, MD33N25, MD40N25, MD9N90, MDP18N20, MDP2N60, MDP5N65, MDP9N20