MDP18N20 Datasheet. Equivalente

 ..1. Size:618K  cn minos
 mp18n20 mpf18n20 mdp18n20 mdt18n20.pdf

Description MP18N20, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 200 V DS I 18 A D R 0.13 DS(ON).Typ

 8.1. Size:1244K  magnachip
 mdf18n50bth mdp18n50bth.pdf

MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27 General Description Features The MDP/F18N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 18.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.27 @VGS = 10V excellent quality. MDP/F18N50B is suitable device for SMPS, HID Applications and general

 8.2. Size:1292K  magnachip
 mdp18n50th.pdf

MDP18N50 N-Channel MOSFET 500V, 18.0 A, 0.27 Features General Description V = 500V DS The MDP18N50 uses advanced Magnachip s I = 18.0A @V = 10V D GS MOSFET Technology, which provides low on- R

 8.3. Size:289K  inchange semiconductor
 mdp18n50bth.pdf

isc N-Channel MOSFET Transistor MDP18N50BTH FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.4. Size:289K  inchange semiconductor
 mdp18n50th.pdf

isc N-Channel MOSFET Transistor MDP18N50TH FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole