DMN3024LK3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN3024LK3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 8.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14.4 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 12.9 nC
   Cossⓘ - Capacitancia de salida: 608 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm
   Paquete / Cubierta: TO252 DPAK

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DMN3024LK3 Datasheet (PDF)

..1. Size:669K diodes
dmn3024lk3.pdf

A Product Line ofDiodes IncorporatedDMN3024LK330V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Low gate drive 24m @ VGS= 10V 14.4A Green component and RoHS compliant (Note 1) 30

..2. Size:265K inchange semiconductor
dmn3024lk3.pdf

isc N-Channel MOSFET Transistor DMN3024LK3FEATURESDrain Current I = 14.4A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

6.1. Size:687K diodes
dmn3024lsd.pdf

A Product Line ofDiodes IncorporatedDMN3024LSD30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 24m @ VGS= 10V 7.2A 30V 36m @ VGS= 4.5V 5.8A M

6.2. Size:305K diodes
dmn3024lss.pdf

A Product Line ofDiodes IncorporatedDMN3024LSS30V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 24m @ VGS= 10V 8.5A 30V 36m @ VGS= 4.5V 6.9A Mechan

7.1. Size:157K diodes
dmn3024sfg.pdf

DMN3024SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Low RDS(ON) ensures on state losses are minimized TA = 25C Small form factor thermally efficient package enables higher 23m @ VGS = 10V 7.5A density end products 30V O

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