MDP5N65 Datasheet. Equivalente

 ..1. Size:681K  cn minos
 mpf5n65 mp5n65 mdp5n65 mdt5n65.pdf

650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking MPF5N65 TO-220F MPF5N65 MP5N65 TO-220C 5N65 MDP5N65 TO-251 5N65 MDT5N65 TO-252 5N65 Absolute Maxim

 9.1. Size:1034K  magnachip
 mdf5n50zth mdp5n50zth.pdf

MDP5N50Z / MDF5N50Z N-Channel MOSFET 500V, 5A, 1.4 General Description Features These N-channel MOSFET are produced using advanced V = 500V DS MagnaChip s MOSFET Technology, which provides low on- I = 5.0A @ V = 10V D GS state resistance, high switching performance and excellent R 1.4 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device fo

 9.2. Size:1047K  magnachip
 mdf5n50fth mdp5n50fth.pdf

MDP5N50F / MDF5N50F N-Channel MOSFET 500V, 4.5 A, 1.55 General Description Features The MDP5N50F/MDF5N50F use advanced Magnachip s V = 500V DS MOSFET Technology, which provides low on-state resistance, I = 4.5A @V = 10V D GS high switching performance and excellent quality. RDS(ON) 1.55 @VGS = 10V MDP5N50F/MDF5N50F are suitable device for SMPS, HID and genera

 9.3. Size:1146K  magnachip
 mdf5n50bth mdp5n50bth.pdf

MDP5N50B / MDF5N50B N-Channel MOSFET 500V, 5.0 A, 1.4 General Description Features The MDP/F5N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 5.0A @VGS = 10V resistance, high switching performance and RDS(ON) 1.4 @VGS = 10V excellent quality. MDP/F5N50B is suitable device for SMPS, HID and Applications general purpose

 9.4. Size:1197K  magnachip
 mdp5n50th.pdf

MDP5N50 N-Channel MOSFET 500V, 5.0 A, 1.4 Features General Description V = 500V DS The MDP5N50 uses advanced Magnachip s I = 5.0A @V = 10V D GS MOSFET Technology, which provides low on-state R 1.4 @V = 10V DS(ON) GS resistance, high switching performance and excellent quality. MDP5N50 is suitable device for SMPS, HID and Applications gener

 9.5. Size:287K  inchange semiconductor
 mdp5n50bth.pdf

isc N-Channel MOSFET Transistor MDP5N50BTH FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.6. Size:287K  inchange semiconductor
 mdp5n50th.pdf

isc N-Channel MOSFET Transistor MDP5N50TH FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.4 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi