DMN3024LSD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMN3024LSD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.2 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 608 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm

Encapsulados: SO8

 Búsqueda de reemplazo de DMN3024LSD MOSFET

- Selecciónⓘ de transistores por parámetros

 

DMN3024LSD datasheet

 ..1. Size:687K  diodes
dmn3024lsd.pdf pdf_icon

DMN3024LSD

A Product Line of Diodes Incorporated DMN3024LSD 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 24m @ VGS= 10V 7.2A 30V 36m @ VGS= 4.5V 5.8A M

 5.1. Size:305K  diodes
dmn3024lss.pdf pdf_icon

DMN3024LSD

A Product Line of Diodes Incorporated DMN3024LSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Green component and RoHS compliant (Note 1) 24m @ VGS= 10V 8.5A 30V 36m @ VGS= 4.5V 6.9A Mechan

 6.1. Size:669K  diodes
dmn3024lk3.pdf pdf_icon

DMN3024LSD

A Product Line of Diodes Incorporated DMN3024LK3 30V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Low gate drive 24m @ VGS= 10V 14.4A Green component and RoHS compliant (Note 1) 30

 6.2. Size:265K  inchange semiconductor
dmn3024lk3.pdf pdf_icon

DMN3024LSD

isc N-Channel MOSFET Transistor DMN3024LK3 FEATURES Drain Current I = 14.4A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

Otros transistores... DMG8880LSS, DMN100, DMN2600UFB, DMN3005LK3, DMN3007LSS, DMN3010LSS, DMN3020LK3, DMN3024LK3, IRF530, DMN3024LSS, DMN3030LSS, DMN3031LSS, DMN3033LDM, DMN3033LSD, DMN3033LSN, DMN3051L, DMN3051LDM