DMN3024LSD Todos los transistores

 

DMN3024LSD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN3024LSD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.2 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 608 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
   Paquete / Cubierta: SO8
     - Selección de transistores por parámetros

 

DMN3024LSD Datasheet (PDF)

 ..1. Size:687K  diodes
dmn3024lsd.pdf pdf_icon

DMN3024LSD

A Product Line ofDiodes IncorporatedDMN3024LSD30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 24m @ VGS= 10V 7.2A 30V 36m @ VGS= 4.5V 5.8A M

 5.1. Size:305K  diodes
dmn3024lss.pdf pdf_icon

DMN3024LSD

A Product Line ofDiodes IncorporatedDMN3024LSS30V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 24m @ VGS= 10V 8.5A 30V 36m @ VGS= 4.5V 6.9A Mechan

 6.1. Size:669K  diodes
dmn3024lk3.pdf pdf_icon

DMN3024LSD

A Product Line ofDiodes IncorporatedDMN3024LK330V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Low gate drive 24m @ VGS= 10V 14.4A Green component and RoHS compliant (Note 1) 30

 6.2. Size:265K  inchange semiconductor
dmn3024lk3.pdf pdf_icon

DMN3024LSD

isc N-Channel MOSFET Transistor DMN3024LK3FEATURESDrain Current I = 14.4A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

Otros transistores... DMG8880LSS , DMN100 , DMN2600UFB , DMN3005LK3 , DMN3007LSS , DMN3010LSS , DMN3020LK3 , DMN3024LK3 , IRF530 , DMN3024LSS , DMN3030LSS , DMN3031LSS , DMN3033LDM , DMN3033LSD , DMN3033LSN , DMN3051L , DMN3051LDM .

History: IXTP50N28T | 3SK249

 

 
Back to Top

 


 
.