MP20N40P Datasheet. Equivalente

 ..1. Size:712K  cn minos
 mp20n40p.pdf

Description MP20N40, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 400 V DS I 20 A D R 0.22 DS(ON).Typ

 9.1. Size:490K  fuji
 fmp20n50es.pdf

FMP20N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V

 9.2. Size:410K  fuji
 fmp20n60s1.pdf

http //www.fujielectric.com/products/semiconductor/ FMP20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance 4.5 0.2 TO-220 10+0.5 0 1.3 0.2 Low switching loss easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications UPS 1.2 0.2 Server PRE-S

 9.3. Size:360K  fuji
 fmp20n50e.pdf

FMP20N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)

 9.4. Size:432K  jilin sino
 mp20n60ei.pdf

N R N-CHANNEL MOSFET MP20N60EI Package MAIN CHARACTERISTICS ID 20A VDSS 600V Rdson-max 0.4 Vgs=10V Qg-Typ 67.6nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LE

 9.5. Size:409K  trinnotech
 tmp20n50 tmpf20n50.pdf

TMP20N50/TMPF20N50 TMP20N50G/TMPF20N50G VDSS = 550 V @Tjmax Features ID = 18A Low gate charge RDS(on) = 0.3 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP20N50 / TMPF20N50 TO-220 / TO-220F TMP20N50 / TMPF20N50 RoHS TMP20N50

 9.6. Size:621K  trinnotech
 tmp20n50a tmpf20n50a.pdf

TMP20N50A(G)/TMPF20N50A(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 18A

 9.7. Size:364K  cn wuxi unigroup
 tma20n65h tmp20n65h.pdf

TMA20N65H, TMP20N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA20N65H TO-220F A2

 9.8. Size:206K  inchange semiconductor
 fmp20n60s1.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FMP20N60S1 FEATURES With TO-220 packaging Low switching loss Low on-state resistance Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC-DC converters Uninterruptible power supply ABSOLUTE MAXIMUM RA