AP15N04S Datasheet. Equivalente

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 ap15n04s.pdf

AP15N04S 40V N-Channel Enhancement Mode MOSFET Description The AP15N04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =15 A DS D R

 8.1. Size:216K  ape
 ap15n03ghj-hf.pdf

AP15N03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15A G RoHS Compliant S Description G TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applications and suited for low voltage a

 8.2. Size:93K  ape
 ap15n03gi.pdf

AP15N03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 15A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

 8.3. Size:209K  ape
 ap15n03gj.pdf

AP15N03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15A G S Description G TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount applications and suited for low voltage applications such as

 8.4. Size:233K  ape
 ap15n03gh.pdf

AP15N03GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 80m Fast Switching ID 15A G RoHS Compliant S Description AP15N03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G D S TO-252(H)

 8.5. Size:1684K  cn apm
 ap15n06s.pdf

AP15N06S 60V N-Channel Enhancement Mode MOSFET Description The AP15N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =15A DS D R

 8.6. Size:2775K  cn apm
 ap15n02s.pdf

AP15N02S 20V N-Channel Enhancement Mode MOSFET Description The AP15N10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =15 A DS D R