DMN3112S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMN3112S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 1.4 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 5.8 A
CARACTERÍSTICAS ELÉCTRICAS
Conductancia de drenaje-sustrato (Cd): 268 pF
Resistencia drenaje-fuente RDS(on): 0.112 Ohm
Empaquetado / Estuche: SOT23
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DMN3112S Datasheet (PDF)
1.1. dmn3112s.pdf 
Size:178K _diodes
DMN3112S N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance: Case: SOT-23 57m? @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m? @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D Low Gate Thr
1.2. dmn3112sss.pdf Size:187K _diodes
DMN3112SSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOP-8L 57m? @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m? @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D Low Gate Threshold
1.3. dmn3112s.pdf Size:80K _tysemi
Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance: • Case: SOT23 57mΩ @ VGS = 10V • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 112mΩ @ VGS = 4.5V • Moisture Sensitivity: Level 1 per J-STD-020 • Low Gate Threshold Voltage • Terminals: Finis
Otros transistores... DMN3031LSS , DMN3033LDM , DMN3033LSD , DMN3033LSN , DMN3051L , DMN3051LDM , DMN3052L , DMN3052LSS , IRF640N , DMN3112SSS , DMN3115UDM , DMN3150L , DMN3150LW , DMN3200U , DMN32D2LDF , DMN32D2LFB4 , DMN32D2LV .
