DMN3112S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMN3112S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.4 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 5.8 A

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 268 pF

Resistencia drenaje-fuente RDS(on): 0.112 Ohm

Empaquetado / Estuche: SOT23

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DMN3112S Datasheet (PDF)

1.1. dmn3112s.pdf Size:178K _diodes

DMN3112S N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data � Low On-Resistance: � Case: SOT-23 57m? @ VGS = 10V � Case Material: Molded Plastic, �Green� Molding Compound. UL Flammability Classification Rating 94V-0 112m? @ VGS = 4.5V � Moisture Sensitivity: Level 1 per J-STD-020D � Low Gate Thr

1.2. dmn3112sss.pdf Size:187K _diodes

DMN3112SSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data � Low On-Resistance � Case: SOP-8L � 57m? @ VGS = 10V � Case Material: Molded Plastic, �Green� Molding Compound. UL Flammability Classification Rating 94V-0 � 112m? @ VGS = 4.5V � Moisture Sensitivity: Level 1 per J-STD-020D � Low Gate Threshold

1.3. dmn3112s.pdf Size:80K _tysemi

Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance: • Case: SOT23 57mΩ @ VGS = 10V • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 112mΩ @ VGS = 4.5V • Moisture Sensitivity: Level 1 per J-STD-020 • Low Gate Threshold Voltage • Terminals: Finis

Otros transistores... DMN3031LSS , DMN3033LDM , DMN3033LSD , DMN3033LSN , DMN3051L , DMN3051LDM , DMN3052L , DMN3052LSS , IRF640N , DMN3112SSS , DMN3115UDM , DMN3150L , DMN3150LW , DMN3200U , DMN32D2LDF , DMN32D2LFB4 , DMN32D2LV .

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