DMN3112S Datasheet. Equivalente

 ..1. Size:178K  diodes
 dmn3112s.pdf

DMN3112S N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 57m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-02

 ..2. Size:80K  tysemi
 dmn3112s.pdf

Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT23 57m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals Finis

 0.1. Size:187K  diodes
 dmn3112sss.pdf

DMN3112SSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOP-8L 57m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020D

 8.1. Size:112K  diodes
 dmn3115udm.pdf

DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SOT-26 60 m @ VGS = 4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 80 m @ VGS = 2.5V Moisture Sensitivity Level 1 per J-STD-020 130 m @ VGS = 1.5V Terminal Connections

 8.2. Size:578K  diodes
 dmn3110lcp3.pdf

DMN3110LCP3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Qg & Qgd BVDSS RDS(ON) Max TA = +25 C Small Footprint Low Profile 0.30mm Height 69m @ VGS = 8V 3.2A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 80m @ VGS = 4.5V 3.0A Halogen and Antimony Free. Green Device (Note 3) Description Mecha

 8.3. Size:333K  diodes
 dmn3110s.pdf

DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed 73m @ VGS = 10V 3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 30V 110m @ VGS = 4.5V 2.7A Quali

 8.4. Size:120K  tysemi
 dmn3110s.pdf

Product specification DMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25 C Fast Switching Speed 73m @ VGS = 10V 3.3A Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 30V 110m @ VGS = 4.5V 2.7A Qualified to AEC-Q101 sta