AP100N04NF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP100N04NF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 22 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 899 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm

Encapsulados: DFN5X6-8L

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AP100N04NF datasheet

 ..1. Size:1319K  cn apm
 ap100n04nf.pdf pdf_icon

AP100N04NF

AP100N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP100N04NF uses advanced APM-SGT II technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100A DS D R

 6.1. Size:903K  cn apm
 ap100n04d.pdf pdf_icon

AP100N04NF

AP100N04D 40V N-Channel Enhancement Mode MOSFET Description The AP100N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100 A DS D R

 7.1. Size:1583K  cn apm
 ap100n03p ap100n03t.pdf pdf_icon

AP100N04NF

AP100N03P/T 30V N-Channel Enhancement Mode MOSFET Description The AP100N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS D R

 7.2. Size:1377K  cn apm
 ap100n03ad.pdf pdf_icon

AP100N04NF

AP100N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP100N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS D R

MOSTRAR MÁS

Otros transistores... APJ14N65T, AP01P10I, AP100N03AD, AP100N03D, AP100N03P, AP100N03T, AP100N03Y, AP100N04D, IRF4905, AP100N08D, AP100P02NF, APG60N10P, APG60N10T, APG80N10NF, APG80N10P, APG80N10T, APJ10N65D