APG40N10S Todos los transistores

 

APG40N10S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APG40N10S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 71 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.8 nS
   Cossⓘ - Capacitancia de salida: 185.4 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SOP8
 

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APG40N10S Datasheet (PDF)

 ..1. Size:2634K  cn apm
 apg40n10s.pdf pdf_icon

APG40N10S

APG40N10S 100V N-Channel Enhancement Mode MOSFET Description The APG40N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS DR

 6.1. Size:1220K  cn apm
 apg40n10df.pdf pdf_icon

APG40N10S

APG40N10DF 100V N-Channel Enhancement Mode MOSFET Description The APG40N10DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS DR

 6.2. Size:2103K  cn apm
 apg40n10d.pdf pdf_icon

APG40N10S

APG40N10D 100V N-Channel Enhancement Mode MOSFET Description The APG40N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =40A DS DR

 6.3. Size:1516K  cn apm
 apg40n10nf.pdf pdf_icon

APG40N10S

APG40N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG40N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uni

MOSTRAR MÁS

Otros transistores... AP10H04DF , AP10H10S , AP10N04MSI , AP10N06D , AP10N06MSI , APG40N10D , APG40N10DF , APG40N10NF , 18N50 , APG60N10D , APG60N10NF , APG130N06P , APG130N06T , APG130N06F , APG180N04NF , APG20N06S , AP10N06S .

History: STP10NA40

 

 
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