AP10N10D Todos los transistores

 

AP10N10D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10N10D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 29 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de AP10N10D MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP10N10D Datasheet (PDF)

 ..1. Size:1385K  cn apm
 ap10n10d.pdf pdf_icon

AP10N10D

AP10N10D 100V N-Channel Enhancement Mode MOSFET Description The AP10N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =10A DS D R

 7.1. Size:1565K  allpower
 ap10n10k.pdf pdf_icon

AP10N10D

AIIP ERAP10N10K DATA SHEET N-Channel Power MOSFETD BT 100% & UIS Test Voss 100V T Simple Drive Requirement 135m0 Fast Switching Characteristic T lo 10A G T RHS cmpliant & Halgen-FreeDescription AP10N10K series are from Advanced Power innovated design and s T0-252silicon process technology to achieve the lowest possible onresistance and fast switchi

 7.2. Size:1388K  cn apm
 ap10n10s.pdf pdf_icon

AP10N10D

AP10N10S 100V N-Channel Enhancement Mode MOSFET Description The AP10N10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12.3A DS D R

 8.1. Size:1893K  cn apm
 ap10n15d.pdf pdf_icon

AP10N10D

AP10N15D 150V N-Channel Enhancement Mode MOSFET Description The AP10N15D es advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =10A DS DR

MOSTRAR MÁS

Otros transistores... APG60N10D , APG60N10NF , APG130N06P , APG130N06T , APG130N06F , APG180N04NF , APG20N06S , AP10N06S , 75N75 , AP10N10S , AP10N15D , AP10N65F , AP10N65P , AP10P04D , AP10P06MSI , AP10P10D , AP120N04P .

 

 
Back to Top

 


 
.