AP120N06P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP120N06P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 172
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 65
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25
V
|Id|ⓘ - Corriente continua de drenaje: 125
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 89
nS
Cossⓘ - Capacitancia
de salida: 521
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0056
Ohm
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de AP120N06P MOSFET
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AP120N06P datasheet
..1. Size:1371K cn apm
ap120n06p ap120n06t.pdf 
AP120N06PIT 65V N-Channel Enhancement Mode MOSFET Description The AP120N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 65V I =125A DS D R
7.4. Size:1486K cn apm
ap120n04d.pdf
AP120N04D 40V N-Channel Enhancement Mode MOSFET Description The AP120N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R
7.5. Size:1444K cn apm
ap120n03nf.pdf
AP120N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP120N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R
7.6. Size:1146K cn apm
ap120n02d.pdf
AP120N02D 20V N-Channel Enhancement Mode MOSFET Description The AP120N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =120A DS D R
7.7. Size:1517K cn apm
ap120n08nf.pdf
AP120N08NF 85V N-Channel Enhancement Mode MOSFET Description The AP120N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =120A DS D R
7.8. Size:2391K cn apm
ap120n08p ap120n08t.pdf
AP120N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP120N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =120A DS D R
7.9. Size:1322K cn apm
ap120n04p ap120n04t.pdf
AP120N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP120N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R
7.10. Size:1481K cn apm
ap120n03d.pdf
AP120N03D 30V N-Channel Enhancement Mode MOSFET Description The AP120N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R
Otros transistores... AP10N15D
, AP10N65F
, AP10N65P
, AP10P04D
, AP10P06MSI
, AP10P10D
, AP120N04P
, AP120N04T
, IRFZ24N
, AP120N06T
, AP120N08P
, AP120N08T
, AP12N40F
, AP12N40P
, AP12N65F
, AP12N65P
, AP150N03P
.
History: AP3407MI
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