DMN32D2LFB4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMN32D2LFB4 Datasheet (PDF)

..1. Size:178K diodes
dmn32d2lfb4.pdf pdf_icon

DMN32D2LFB4N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data N-Channel MOSFET Case: DFN1006H4-3 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage, 1.2V max Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Con

6.1. Size:274K diodes
dmn32d2ldf.pdf pdf_icon

DMN32D2LDFCOMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Common Source Dual N-Channel MOSFET Case: SOT-353 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold

6.2. Size:179K diodes
dmn32d2lv.pdf pdf_icon

DMN32D2LVDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage, 1.2V max Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitan

8.1. Size:341K diodes
dmn32d4sdw.pdf pdf_icon

DMN32D4SDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 0.4 @ VGS = 10V 0.65A Fast Switching Speed 30V ESD Protected Gate 0.7 @ VGS = 4.5V 0.52A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. G

Otros transistores... DMN3052LSS , DMN3112S , DMN3112SSS , DMN3115UDM , DMN3150L , DMN3150LW , DMN3200U , DMN32D2LDF , RU6888R , DMN32D2LV , DMN3300U , DMN3404L , DMN3730U , DMN3730UFB , DMN3730UFB4 , DMN4468LSS , DMN4800LSS .