AP160N08T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP160N08T 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 122.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 160 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 985 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Encapsulados: TO263
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AP160N08T datasheet
ap160n08p ap160n08t.pdf
AP160N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP160N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =160A DS D R
ap160n04p ap160n04t.pdf
AP160N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP160N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =160 A DS D R
ap160n10p ap160n10t.pdf
AP160N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP160N10P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =100V I =160A DS D R
Otros transistores... AP12N65P, AP150N03P, AP150N03T, AP150N10P, AP150N10T, AP160N04P, AP160N04T, AP160N08P, 8N65, AP160N10P, AP160N10T, AP180N03P, AP180N03T, AP180N08P, AP180N08T, AP18N20D, AP18N20Y
Parámetros del MOSFET. Cómo se afectan entre sí.
History: AP120N02D | AP80P06P | FXN4N60D | AP80P06T | AP85N08BT
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