AP50N06BD Todos los transistores

 

AP50N06BD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP50N06BD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO252
 

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AP50N06BD Datasheet (PDF)

 ..1. Size:1589K  cn apm
 ap50n06bd ap50n06by.pdf pdf_icon

AP50N06BD

AP50N06BDIY 60V N-Channel Enhancement Mode MOSFET Description The AP50N06BD/Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50A DS DR

 7.1. Size:2440K  cn apm
 ap50n06nf.pdf pdf_icon

AP50N06BD

AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR

 7.2. Size:824K  cn apm
 ap50n06p ap50n06t.pdf pdf_icon

AP50N06BD

AP50N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP50N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR

 7.3. Size:2272K  cn apm
 ap50n06d.pdf pdf_icon

AP50N06BD

AP50N06D 60V N-Channel Enhancement Mode MOSFET Description The AP50N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS DR

MOSTRAR MÁS

Otros transistores... AP40N20T , AP45P06F , AP45P06P , AP45P06T , AP4N65D , AP4N65Y , AP4N65F , AP4N65P , IRFP260N , AP50N06BY , AP50N06P , AP50N06T , AP50P06P , AP50P06T , AP5G03S , AP5G03DF , AP5N50F .

 

 
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