DMN3730U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN3730U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.71 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.94 A

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 64.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm
   Paquete / Cubierta: SOT23

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DMN3730U Datasheet (PDF)

..1. Size:190K diodes
dmn3730u.pdf

A Product Line ofDiodes IncorporatedDMN3730U30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits ID Max (Note 5) Low VGS(th), can be driven directly from a battery V(BR)DSS Max RDS(on) Low RDS(on) TA = 25C Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) 460m @ VGS= 4.5V 0.94A 30

..2. Size:170K tysemi
dmn3730u.pdf

Product specification DMN3730U30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits Low VGS(th), can be driven directly from a battery ID Max (Note 5)V(BR)DSS Max RDS(on) Low RDS(on)TA = 25C Lead Free, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) 460m @ VGS= 4.5V 0.94A 30V ESD Protect

0.1. Size:140K diodes
dmn3730ufb4.pdf

DMN3730UFB430V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.4mm ultra low profile package for thin application ID 0.6mm2 package footprint, 10 times smaller than SOT23 V(BR)DSS RDS(on) TA = 25C Low VGS(th), can be driven directly from a battery Low RDS(on) 460m @ VGS= 4.5V 0.9A 30V Lead Free, RoHS Compliant (Note

0.2. Size:144K diodes
dmn3730ufb-7 dmn3730ufb.pdf

A Product Line ofDiodes Incorporated DMN3730UFB30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.5mm ultra low profile package for thin application ID 0.6mm2 package footprint, 10 times smaller than SOT23 V(BR)DSS RDS(on) TA = 25C Low VGS(th), can be driven directly from a battery Low RDS(on) 460m @ VGS= 4.5V 0.9A 30V

Otros transistores... DMN3150L , DMN3150LW , DMN3200U , DMN32D2LDF , DMN32D2LFB4 , DMN32D2LV , DMN3300U , DMN3404L , 2N60 , DMN3730UFB , DMN3730UFB4 , DMN4468LSS , DMN4800LSS , DMN4800LSSL , DMS3016SFG , DMS3016SSSA , ZXM61N03F .

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