AP60N03P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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AP60N03P 30V N-Channel Enhancement Mode MOSFET Description The AP60N03P uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60 A DS DR

..2. Size:1346K cn apm
ap60n03f ap60n03t ap60n03p.pdf pdf_icon

AP60N03FITIP 30V N-Channel Enhancement Mode MOSFET Description The AP60N03F/T/P uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS DR

7.1. Size:72K ape
ap60n03gs.pdf pdf_icon

AP60N03GS/PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

7.2. Size:162K ape
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AP60N03GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching Characteristic RDS(ON) 13.5m Simple Drive Requirement ID 55AG RoHS Compliant & Halogen-FreeSDescriptionAP60N03 series are from Advanced Power innovated design andGsilicon process technology to achieve the l

7.3. Size:61K ape
ap60n03gh ap60n03gj.pdf pdf_icon

AP60N03GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Fast Switching RDS(ON) 13.5m Simple Drive Requirement ID 55AG RoHS CompliantSDescriptionGThe Advanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized d

7.4. Size:1244K cn apm
ap60n03d.pdf pdf_icon

AP60N03D 30V N-Channel Enhancement Mode MOSFET Description The AP60N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS DR

7.5. Size:1673K cn apm
ap60n03df.pdf pdf_icon

AP60N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP60N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS DR

7.6. Size:1843K cn apm
ap60n03nf.pdf pdf_icon

AP60N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP60N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =60A DS DR

7.7. Size:1598K cn apm
ap60n03y.pdf pdf_icon

AP60N03Y 30V N-Channel Enhancement Mode MOSFET Description The AP60N03Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =60A DS DR

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