AP7N65D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP7N65D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 26 nS
Cossⓘ - Capacitancia de salida: 101 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de AP7N65D MOSFET
AP7N65D Datasheet (PDF)
ap7n65d ap7n65y.pdf
AP7N65DIY 650V N-Channel Enhancement Mode MOSFET Description The AP7N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge
ap7n65f ap7n65p.pdf
AP7N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP7N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge
Otros transistores... AP5N50F , AP5N50P , AP5N50T , AP60N03F , AP60N03T , AP60N03P , AP70P03P , AP70P03T , 8205A , AP7N65Y , AP7N65F , AP7N65P , AP80N07P , AP80N07T , AP80N10P , AP80N10T , AP80P06P .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP9N90T | AP9N90P | AP9N90F | AP90N06T | AP90N06P | AP85N08BT | AP85N08BP | AP80P10T | AP80P10P | AP80P06T | AP80P06P | AP80N10T | AP80N10P | AP80N07T | AP80N07P | AP7N65P
Popular searches
2sb56 | 2sc1451 datasheet | 2sc373 | a1023 datasheet | 2sc1080 | 2sb618 | 2sc1328 | 2sc1845 transistor