DMN3730UFB4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMN3730UFB4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.69 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.9 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 65 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm

Encapsulados: X2DFN10063

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DMN3730UFB4 datasheet

 ..1. Size:140K  diodes
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DMN3730UFB4

DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.4mm ultra low profile package for thin application ID 0.6mm2 package footprint, 10 times smaller than SOT23 V(BR)DSS RDS(on) TA = 25 C Low VGS(th), can be driven directly from a battery Low RDS(on) 460m @ VGS= 4.5V 0.9A 30V Lead Free , RoHS Compliant (Note

 4.1. Size:144K  diodes
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DMN3730UFB4

 6.1. Size:190K  diodes
dmn3730u.pdf pdf_icon

DMN3730UFB4

A Product Line of Diodes Incorporated DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits ID Max (Note 5) Low VGS(th), can be driven directly from a battery V(BR)DSS Max RDS(on) Low RDS(on) TA = 25 C Lead Free , RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) 460m @ VGS= 4.5V 0.94A 30

 6.2. Size:170K  tysemi
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DMN3730UFB4

Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits Low VGS(th), can be driven directly from a battery ID Max (Note 5) V(BR)DSS Max RDS(on) Low RDS(on) TA = 25 C Lead Free , RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) 460m @ VGS= 4.5V 0.94A 30V ESD Protect

Otros transistores... DMN3200U, DMN32D2LDF, DMN32D2LFB4, DMN32D2LV, DMN3300U, DMN3404L, DMN3730U, DMN3730UFB, 2N60, DMN4468LSS, DMN4800LSS, DMN4800LSSL, DMS3016SFG, DMS3016SSSA, ZXM61N03F, ZXM62N03G, ZXMD63N03X