AP120N10NF MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:1459K cn apm
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AP120N10NF 100V N-Channel Enhancement Mode MOSFET Description The AP120N10NF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =120A DS D R

8.1. Size:578K allpower
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8.2. Size:680K allpower
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8.3. Size:1631K allpower
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8.4. Size:1486K cn apm
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AP120N04D 40V N-Channel Enhancement Mode MOSFET Description The AP120N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R

8.5. Size:1444K cn apm
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AP120N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP120N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R

8.6. Size:1146K cn apm
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AP120N02D 20V N-Channel Enhancement Mode MOSFET Description The AP120N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =120A DS D R

8.7. Size:1517K cn apm
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AP120N08NF 85V N-Channel Enhancement Mode MOSFET Description The AP120N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =120A DS D R

8.8. Size:2391K cn apm
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AP120N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP120N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =120A DS D R

8.9. Size:1322K cn apm
ap120n04p ap120n04t.pdf pdf_icon

AP120N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP120N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R

8.10. Size:1481K cn apm
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AP120N03D 30V N-Channel Enhancement Mode MOSFET Description The AP120N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R

8.11. Size:1371K cn apm
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AP120N06PIT 65V N-Channel Enhancement Mode MOSFET Description The AP120N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 65V I =125A DS D R

8.12. Size:1545K cn apm
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AP120N10NF datasheet

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