AP3400MI-L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3400MI-L  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 41.8 nS

Cossⓘ - Capacitancia de salida: 51.3 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: SOT23

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AP3400MI-L datasheet

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AP3400MI-L

AP3400MI-L 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI-LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R

 6.1. Size:2282K  cn apm
 ap3400mi.pdf pdf_icon

AP3400MI-L

AP3400MI 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R

 8.1. Size:1869K  allpower
 ap3400.pdf pdf_icon

AP3400MI-L

 8.2. Size:1290K  allpower
 ap3400s.pdf pdf_icon

AP3400MI-L

MOSTRAR MÁS

Otros transistores... AP30P03DF, AP30P06D, AP30P10P, AP320N04TLG5, AP3400AI, AP3400BI, AP3400CI, AP3400DI, K4145, AP3401AI, AP3401MI, AP3404BI, AP3407AI, AP3407MI, AP3409MI, AP90N06F, AP90P01D