AP3401AI Datasheet. Equivalente

 ..1. Size:1360K  cn apm
 ap3401ai.pdf

AP3401AI -30V P-Channel Enhancement Mode MOSFET Description The AP3401AI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.8A DS D R

 8.1. Size:2303K  allpower
 ap3401.pdf

 8.2. Size:1754K  cn apm
 ap3401mi.pdf

AP3401MI 30V P-Channel Enhancement Mode MOSFET Description The AP3401MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.2A DS D R

 9.1. Size:72K  ape
 ap3403gh ap3403gj.pdf

AP3403GH/J Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 200m Fast Switching ID - 10A G S Description G D S Advanced Power MOSFETs utilized advanced processing techniques to TO-252(H) achieve the lowest poss

 9.2. Size:62K  ape
 ap3402geh ap3402gej.pdf

AP3402GEH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 35V D Single Drive Requirement RDS(ON) 18m Surface Mount Package ID 38A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device de

 9.3. Size:93K  ape
 ap3405gh-hf.pdf

AP3405GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower Gate Charge BVDSS -30V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -8.6A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, TO

 9.4. Size:1869K  allpower
 ap3400.pdf

 9.5. Size:2028K  allpower
 ap3407.pdf

 9.6. Size:1473K  allpower
 ap3407s.pdf

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 ap3404s.pdf

S S S S S

 9.8. Size:1523K  allpower
 ap3404.pdf

 9.9. Size:1290K  allpower
 ap3400s.pdf

 9.10. Size:1265K  cn apm
 ap3400mi-l.pdf

AP3400MI-L 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI-LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R

 9.11. Size:1296K  cn apm
 ap3409mi.pdf

AP3409MI -30V P-Channel Enhancement Mode MOSFET Description The AP3409MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-12A DS D R

 9.12. Size:1476K  cn apm
 ap3400bi.pdf

AP3400BI 30V N-Channel Enhancement Mode MOSFET Description The AP3400BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R

 9.13. Size:2396K  cn apm
 ap3404mi.pdf

AP3404MI 30V N-Channel Enhancement Mode MOSFET Description The AP3404MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6A DS D R

 9.14. Size:1143K  cn apm
 ap3400di.pdf

AP3400DI 20V N-Channel Enhancement Mode MOSFET Description The AP3400DI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =3.2A DS D R

 9.15. Size:2266K  cn apm
 ap3400ai.pdf

AP3400AI 30V N-Channel Enhancement Mode MOSFET Description The AP3400AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R

 9.16. Size:1507K  cn apm
 ap3407ai.pdf

AP3407AI -30V P-Channel Enhancement Mode MOSFET Description The AP3407AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.2A DS D R

 9.17. Size:2067K  cn apm
 ap3404bi.pdf

AP3404BI 30V N-Channel Enhancement Mode MOSFET Description The AP3404BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =4.2A DS D R

 9.18. Size:1232K  cn apm
 ap3400ci.pdf

AP3400CI 30V N-Channel Enhancement Mode MOSFET Description The AP3400CI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =4.2A DS D R

 9.19. Size:2282K  cn apm
 ap3400mi.pdf

AP3400MI 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R

 9.20. Size:1316K  cn apm
 ap3407mi.pdf

AP3407MI -30V P-Channel Enhancement Mode MOSFET Description The AP3407MI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-4.8A DS D R