AP9435A Todos los transistores

AP9435A -30V P-Channel Enhancement Mode MOSFET Description The AP9435A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-6A DS D R

AP9435GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low Gate Charge RDS(ON) 50m D Fast Switching ID -5.3A G S RoHS Compliant S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic

AP9435GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching ID - 20A G S Description G D Advanced Power MOSFETs utilized advanced processing techniques to S TO-252(H) achieve the lowest possible on-resistance, extremely efficient and cost-

AP9435GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID - 15A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

AP9435GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low Gate Charge RDS(ON) 50m D Fast Switching ID -5.3A G S S S SO-8 Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on

AP9435GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Low Gate Charge RDS(ON) 50m Fast Switching Characteristic ID -6A S D RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchi

AP9435GP RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching ID - 15A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effecti

AP9435GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Simple Drive Requirement RDS(ON) 50m Fast Switching Characteristic ID - 20A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to G D S TO-252(H) achieve the lowest poss

AP9435GG-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Fast Switching Characteristic RDS(ON) 50m Single Drive Requirement ID - 4.2A G RoHS Compliant & Halogen-Free S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

AP9435GK www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Load

AP9435K www.VBsemi.tw P-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET - 35 9.8 nC 0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S APPLICATIONS Load S

AP9435GM www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D Top

AP9435GG www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.056 at VGS = - 4.5 V - 6.0 APPLICATIONS Load Switch Battery Switch D S G G D S D P-Channel MOSFET ABS

AP9435GH www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.033 at VGS = - 10 V - 26 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.046 at VGS = - 4.5 V - 21 APPLICATIONS Load Switch Notebook Adaptor Switch S TO-252 G G D S D Top View P-Ch