AP15N10D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP15N10D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 19.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25.8 nS
Cossⓘ - Capacitancia de salida: 55 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Encapsulados: TO252
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AP15N10D datasheet
ap15n10d.pdf
AP15N10D 100V N-Channel Enhancement Mode MOSFET Description The AP15N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =19.3A DS D R
ap15n10d-l.pdf
AP15N10D-L 100V N-Channel Enhancement Mode MOSFET Description The AP15N10D-L uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =14.1A DS D R
ap15n10.pdf
AP15N10 DATA SHEET DATA SHEET N-Channel Enhancement Mode Power MOSFET 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features Application 100V, 14.6A Synchronous buck converter applications. R =100m (max.) @ V = 10V, I = 5A DS(ON) GS D Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology RoHS Complia
Otros transistores... AP150N03D, AP150N03NF, AP150N04D, AP150P03NF, AP15G03DF, AP15G03NF, AP15N02S, AP15N06S, IRFB4227, AP15N10D-L, AP15N10S, AP15N10Y, AP15N12D, AP15P04D, AP15P06D, AP2300AI, AP2300MI
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