AP15N12D Todos los transistores

 ..1. Size:1545K  cn apm
 ap15n12d.pdf

AP15N12D 120V N-Channel Enhancement Mode MOSFET Description The AP15N12D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V I =15A DS D R

 8.1. Size:6508K  allpower
 ap15n10.pdf

AP15N10 DATA SHEET DATA SHEET N-Channel Enhancement Mode Power MOSFET 100V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features Application 100V, 14.6A Synchronous buck converter applications. R =100m (max.) @ V = 10V, I = 5A DS(ON) GS D Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology RoHS Complia

 8.2. Size:1728K  allpower
 ap15n10k.pdf

 8.3. Size:2129K  cn apm
 ap15n10d-l.pdf

AP15N10D-L 100V N-Channel Enhancement Mode MOSFET Description The AP15N10D-L uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =14.1A DS D R

 8.4. Size:1038K  cn apm
 ap15n10s.pdf

AP15N10S 100V N-Channel Enhancement Mode MOSFET Description The AP15N10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =15A DS D R

 8.5. Size:2992K  cn apm
 ap15n10y.pdf

AP15N10Y 100V N-Channel Enhancement Mode MOSFET Description The AP15N10Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =14.1A DS D R

 8.6. Size:1596K  cn apm
 ap15n10d.pdf

AP15N10D 100V N-Channel Enhancement Mode MOSFET Description The AP15N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =19.3A DS D R