AP2305AI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP2305AI -20V P-Channel Enhancement Mode MOSFET Description The AP2305AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-4.9A DS DR

AP2305AGNPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 80mD Surface Mount Device ID - 3.2ASSOT-23GDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,G, low on-resistance and cos

AP2305AGN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 80mD Surface Mount Device ID - 3.2A RoHS CompliantSSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, low on-resistan

AP2305AGNwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-2