AP2305MI Todos los transistores

 ..1. Size:1273K  cn apm
 ap2305mi.pdf

AP2305MI -20V P-Channel Enhancement Mode MOSFET Description The AP2305MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-4.9A DS D R

 8.1. Size:59K  ape
 ap2305agn.pdf

AP2305AGN Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 80m D Surface Mount Device ID - 3.2A S SOT-23 G Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G , low on-resistance and cos

 8.2. Size:96K  ape
 ap2305gn.pdf

AP2305GN Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 65m Surface Mount Device ID - 3.7A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,lo

 8.3. Size:57K  ape
 ap2305cgn-hf.pdf

AP2305CGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Package Outline RDS(ON) 85m Surface Mount Device ID - 3.2A S RoHS Compliant & Halogen-Free SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,l

 8.4. Size:94K  ape
 ap2305bgn-hf.pdf

AP2305BGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 65m D Surface Mount Device ID -4.2A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistan

 8.5. Size:59K  ape
 ap2305n-hf.pdf

AP2305N-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 65m Surface Mount Device ID - 3.4A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,lo

 8.6. Size:94K  ape
 ap2305gn-hf.pdf

AP2305GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 65m D Surface Mount Device ID - 4.2A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resis

 8.7. Size:79K  ape
 ap2305agn-hf.pdf

AP2305AGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 80m D Surface Mount Device ID - 3.2A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistan

 8.8. Size:642K  allpower
 ap2305.pdf

 8.9. Size:866K  cn vbsemi
 ap2305agn.pdf

AP2305AGN www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2

 8.10. Size:868K  cn vbsemi
 ap2305gn.pdf

 8.11. Size:2104K  cn apm
 ap2305bi.pdf

AP2305BI -20V P-Channel Enhancement Mode MOSFET Description The AP2305BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-4.2A DS D R

 8.12. Size:1569K  cn apm
 ap2305ai.pdf

AP2305AI -20V P-Channel Enhancement Mode MOSFET Description The AP2305AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-4.9A DS D R