AP2313MI Todos los transistores

 ..1. Size:1715K  cn apm
 ap2313mi.pdf

AP2313MI -12V P-Channel Enhancement Mode MOSFET Description The AP2313MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-8A DS D R

 8.1. Size:57K  ape
 ap2313gn.pdf

AP2313GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 160m Surface Mount Device ID -2.5A S SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiven

 8.2. Size:57K  ape
 ap2313gn-hf.pdf

AP2313GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 160m Surface Mount Device ID -2.5A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, l

 9.1. Size:56K  ape
 ap2310gg-hf.pdf

AP2310GG-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60V D Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, S rug

 9.2. Size:99K  ape
 ap2319gn-hf.pdf

AP2319GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 90m D Surface Mount Device ID -3.1A RoHS Compliant & Halogen-Free S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, l

 9.3. Size:59K  ape
 ap2318agen-hf.pdf

AP2318AGEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 540mA S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to G achieve the lowest possible on

 9.4. Size:120K  ape
 ap2311gn.pdf

AP2311GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Small Package Outline RDS(ON) 250m Surface Mount Device ID - 1.8A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec

 9.5. Size:93K  ape
 ap2317gn-hf.pdf

AP2317GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 52m D Surface Mount Device ID - 4.2A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resist

 9.6. Size:49K  ape
 ap2310gk-hf.pdf

AP2310GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Lower Gate Charge RDS(ON) 90m S Fast Switching Characteristic ID 4.1A D RoHS Compliant & Halogen-Free SOT-223 G Description D Advanced Power MOSFETs from APEC

 9.7. Size:125K  ape
 ap2311gn-hf.pdf

AP2311GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Small Package Outline RDS(ON) 250m Surface Mount Device ID - 1.8A S RoHS Compliant SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resi

 9.8. Size:180K  ape
 ap2316gn.pdf

AP2316GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Package Outline RDS(ON) 42m Surface Mount Device ID3 4.7A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low

 9.9. Size:97K  ape
 ap2318gen-hf.pdf

AP2318GEN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mA S RoHS Compliant SOT-23 G Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extrem

 9.10. Size:93K  ape
 ap2310cgn-hf.pdf

AP2310CGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 75m Surface Mount Device ID 3.2A S Halogen Free & RoHS Compliant Product SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible

 9.11. Size:58K  ape
 ap2316gn-hf.pdf

AP2316GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7A S RoHS Compliant & Halogen-Free SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistanc

 9.12. Size:148K  ape
 ap2318gen.pdf

AP2318GEN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30V D Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mA S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2318 series are from Advanced Power innovated design and silicon G process technology to achieve t

 9.13. Size:50K  ape
 ap2311gk-hf.pdf

AP2311GK-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60V D Lower Gate Charge RDS(ON) 250m S Fast Switching Characteristic ID - 2.4A D RoHS Compliant & Halogen-Free SOT-223 G Description Advanced Power MOSFETs from APEC

 9.14. Size:58K  ape
 ap2310agn-hf.pdf

AP2310AGN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 65V D Small Package Outline RDS(ON) 80m Surface Mount Device ID 3A S RoHS Compliant & Halogen-Free SOT-23 G D Description AP2310A series are from Advanced Power innovated design and silicon process technology to achieve the lo

 9.15. Size:68K  ape
 ap2315gen.pdf

AP2315GEN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Package Outline RDS(ON) 1.25 Surface Mount Device ID - 840mA S G SOT-23 Description Advanced Power MOSFETs from APEC provide the designer D with the best combination of fast switching, low on-resistance and cost-effec

 9.16. Size:94K  ape
 ap2310gn-hf.pdf

AP2310GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 90m Surface Mount Device ID 3A S RoHS Compliant SOT-23 G D Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely e

 9.17. Size:68K  ape
 ap2312gn.pdf

AP2312GN Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 50m D Surface mount package ID 4.3A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible o

 9.18. Size:68K  ape
 ap2310gn.pdf

AP2310GN Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V Small Package Outline RDS(ON) 90m D Surface Mount Device ID 3A S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible o

 9.19. Size:146K  ape
 ap2314gn.pdf

AP2314GN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Lower On-resistance RDS(ON) 75m Surface Mount Package ID 3.5A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on

 9.20. Size:95K  ape
 ap2314gn-hf.pdf

AP2314GN-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 75m D Surface mount package ID 3.5A RoHS Compliant & Halogen-Free S SOT-23 G Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resista

 9.21. Size:149K  ape
 ap2318ben.pdf

AP2318BEN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 3.0V Gate Drive BVDSS 30V D Lower Gate Charge RDS(ON) 1.5 Fast Switching Performance ID 0.53A S RoHS Compliant & Halogen-Free SOT-23S G D Description AP2318B series are from Advanced Power innovated design and silicon G process technology to achiev

 9.22. Size:569K  allpower
 ap2318a.pdf

AP2318A N-Channel Enhancement Mosfet Features 20V,6A R

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 ap2317sd.pdf

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 ap2312.pdf

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 ap2316.pdf

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 ap2310.pdf

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 ap2317qd.pdf

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 ap2317a.pdf

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 ap2310s.pdf

AIIP ER AP2310S DATA SHEET N-Channel p wer MOSFET Descripti n The AP2310S uses advanced trench technol y to provide N low gate charge and operation with gate excellent Rosco , voltages as low as 2.5V. This device is suitable for use as a Ba e protection or in other switching application. Schematic Diagram General Features 3A Vos =60V o = ,l Ros(ON

 9.30. Size:3068K  cn vbsemi
 ap2311gn.pdf

AP2311GN www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 60 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.04 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 12 P-Channel Qgs (nC) 3.8 175 C Operating Temperature Qgd (nC) 5.1 Dynamic dV/

 9.31. Size:1490K  cn vbsemi
 ap2310gg.pdf

AP2310GG www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 4.5 V 7.1 RoHS 29 nC COMPLIANT 60 APPLICATIONS 0.088 at VGS = 10 V 6.7 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n

 9.32. Size:1228K  cn apm
 ap2312ai.pdf

AP2312AI 20V N-Channel Enhancement Mode MOSFET Description The AP2312AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS D R

 9.33. Size:1302K  cn apm
 ap2312mi.pdf

AP2312MI 20V N-Channel Enhancement Mode MOSFET Description The AP2312MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS D R

 9.34. Size:1157K  cn apm
 ap2311ai.pdf

AP2311AI -12V P-Channel Enhancement Mode MOSFET Description The AP2311AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-5.8A DS D R

 9.35. Size:1188K  cn apm
 ap2311mi.pdf

AP2311MI -12V P-Channel Enhancement Mode MOSFET Description The AP2311MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-7.0A DS D R