AP2313MI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP2313MI -12V P-Channel Enhancement Mode MOSFET Description The AP2313MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-8A DS DR

AP2313GNRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Package Outline RDS(ON) 160m Surface Mount Device ID -2.5ASSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast switching, low on-resistance and cost-effectiven

AP2313GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20VD Small Package Outline RDS(ON) 160m Surface Mount Device ID -2.5AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast switching, l

AP2310GG-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60VD Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Srug

AP2319GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V Small Package Outline RDS(ON) 90mD Surface Mount Device ID -3.1A RoHS Compliant & Halogen-FreeSSOT-23 GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,l

AP2318AGEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 540mAS RoHS Compliant & Halogen-FreeSOT-23 GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toGachieve the lowest possible on

AP2311GNRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD Small Package Outline RDS(ON) 250m Surface Mount Device ID - 1.8ASSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Glow on-resistance and cost-effec

AP2317GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 52mD Surface Mount Device ID - 4.2A RoHS CompliantSSOT-23GDescription DAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Glow on-resist

AP2310GK-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 90mS Fast Switching Characteristic ID 4.1AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAdvanced Power MOSFETs from APEC

AP2311GN-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD Small Package Outline RDS(ON) 250m Surface Mount Device ID - 1.8AS RoHS CompliantSOT-23GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Glow on-resi

AP2316GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 42m Surface Mount Device ID3 4.7AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, low

AP2318GEN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mAS RoHS CompliantSOT-23 GDescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extrem

AP2310CGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 75m Surface Mount Device ID 3.2AS Halogen Free & RoHS Compliant ProductSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible

AP2316GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Package Outline RDS(ON) 42m Surface Mount Device ID 4.7AS RoHS Compliant & Halogen-FreeSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistanc

AP2318GENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 30VD Small Outline Package RDS(ON) 1.5 Surface Mount Device ID 500mAS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2318 series are from Advanced Power innovated design and siliconGprocess technology to achieve t

AP2311GK-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD Lower Gate Charge RDS(ON) 250mS Fast Switching Characteristic ID - 2.4AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionAdvanced Power MOSFETs from APEC

AP2310AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 65VD Small Package Outline RDS(ON) 80m Surface Mount Device ID 3AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2310A series are from Advanced Power innovated design and siliconprocess technology to achieve the lo

AP2315GENRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 1.25 Surface Mount Device ID - 840mASGSOT-23DescriptionAdvanced Power MOSFETs from APEC provide the designerDwith the best combination of fast switching, low on-resistance and cost-effec

AP2310GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 90m Surface Mount Device ID 3AS RoHS CompliantSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely e

AP2312GNPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 50mD Surface mount package ID 4.3ASSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible o

AP2310GNPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS 60V Small Package Outline RDS(ON) 90m DSurface Mount Device ID 3A SSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible o

AP2314GNHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower On-resistance RDS(ON) 75m Surface Mount Package ID 3.5AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestcombination of fast switching,low on

AP2314GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Lower on-resistance RDS(ON) 75mD Surface mount package ID 3.5A RoHS Compliant & Halogen-FreeSSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resista

AP2318BENHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 3.0V Gate Drive BVDSS 30VD Lower Gate Charge RDS(ON) 1.5 Fast Switching Performance ID 0.53AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2318B series are from Advanced Power innovated design and siliconGprocess technology to achiev

AIIP ERAP2310S DATA SHEET N-Channel pwer MOSFETDescriptinThe AP2310S uses advanced trench technol y to provide N} low gate charge and operation with gate excellent Rosco , voltages as low as 2.5V. This device is suitable for use as a Ba eprotection or in other switching application. Schematic Diagram General Features 3A Vos =60V o =,lRos(ON}

AP2311GNwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 60Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;f = 60 Hz)RDS(on) ()VGS = - 10 V 0.04RoHS*COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 12 P-ChannelQgs (nC) 3.8 175 C Operating TemperatureQgd (nC) 5.1 Dynamic dV/

AP2310GGwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n

AP2312AI 20V N-Channel Enhancement Mode MOSFET Description The AP2312AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS DR

AP2312MI 20V N-Channel Enhancement Mode MOSFET Description The AP2312MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS DR

AP2311AI -12V P-Channel Enhancement Mode MOSFET Description The AP2311AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-5.8A DS DR

AP2311MI -12V P-Channel Enhancement Mode MOSFET Description The AP2311MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-7.0A DS DR