AP50N03AD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP50N03AD Datasheet (PDF)

..1. Size:1666K cn apm
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AP50N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP50N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =50A DS DR

7.1. Size:1079K cn apm
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AP50N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP50N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50A DS DR

7.2. Size:1736K cn apm
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AP50N03S 30V N-Channel Enhancement Mode MOSFET Description The AP50N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS DR

7.3. Size:1965K cn apm
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AP50N03D 30V N-Channel Enhancement Mode MOSFET Description The AP50N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS DR

Otros transistores... AP2312MI , AP2313MI , AP2320MI , AP4N10MI , AP4N15MI , AP4P05MI , AP50G03GD , AP50H06NF , AON7410 , AP50N03D , AP50N03DF , AP50N04D , AP50N05D , AP50N06D , AP50N06NF , AP50N10D , AP50N10P .