AP50N05D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP50N05D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 31.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12.8 nS
Cossⓘ - Capacitancia de salida: 107 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de AP50N05D MOSFET
- Selecciónⓘ de transistores por parámetros
AP50N05D datasheet
..1. Size:973K cn apm
ap50n05d.pdf 
AP50N05D 50V N-Channel Enhancement Mode MOSFET Description The AP50N05D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 50V I =50 A DS D R
8.6. Size:2440K cn apm
ap50n06nf.pdf
AP50N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R
8.7. Size:824K cn apm
ap50n06p ap50n06t.pdf
AP50N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP50N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R
8.8. Size:1589K cn apm
ap50n06bd ap50n06by.pdf
AP50N06BDIY 60V N-Channel Enhancement Mode MOSFET Description The AP50N06BD/Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50A DS D R
8.9. Size:1079K cn apm
ap50n03df.pdf
AP50N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP50N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50A DS D R
8.10. Size:2272K cn apm
ap50n06d.pdf
AP50N06D 60V N-Channel Enhancement Mode MOSFET Description The AP50N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R
8.11. Size:3648K cn apm
ap50n06df.pdf
AP50N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP50N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =50 A DS D R
8.12. Size:1666K cn apm
ap50n03ad.pdf
AP50N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP50N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =50A DS D R
8.13. Size:1736K cn apm
ap50n03s.pdf
AP50N03S 30V N-Channel Enhancement Mode MOSFET Description The AP50N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS D R
8.14. Size:1600K cn apm
ap50n06y.pdf
AP50N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP50N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =60V I =50A DS D R
8.15. Size:1965K cn apm
ap50n03d.pdf
AP50N03D 30V N-Channel Enhancement Mode MOSFET Description The AP50N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS D R
8.16. Size:851K cn apm
ap50n04d.pdf
AP50N04D 40V N-Channel Enhancement Mode MOSFET Description The AP50N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =50 A DS D R
Otros transistores... AP4N15MI, AP4P05MI, AP50G03GD, AP50H06NF, AP50N03AD, AP50N03D, AP50N03DF, AP50N04D, IRFB3607, AP50N06D, AP50N06NF, AP50N10D, AP50N10P, AP50N20MP, AP80P10D, AP8205A-21, AP8205S
