AP180N04NF Todos los transistores

 

AP180N04NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP180N04NF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 68 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.7 nS
   Cossⓘ - Capacitancia de salida: 1510 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
   Paquete / Cubierta: PDFN5X6-8L
 

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AP180N04NF Datasheet (PDF)

 ..1. Size:1493K  cn apm
 ap180n04nf.pdf pdf_icon

AP180N04NF

AP180N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP180N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =180A DS DR

 7.1. Size:1530K  cn apm
 ap180n03d.pdf pdf_icon

AP180N04NF

AP180N03D 30V N-Channel Enhancement Mode MOSFET Description The AP180N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =180A DS DR

 7.2. Size:1647K  cn apm
 ap180n03p ap180n03t.pdf pdf_icon

AP180N04NF

AP180N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP180N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =180 A DS DR

 7.3. Size:1759K  cn apm
 ap180n08p ap180n08t.pdf pdf_icon

AP180N04NF

AP180N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP180N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =180A DS DR

MOSTRAR MÁS

Otros transistores... AP8V06S , AP90N02D , AP90N02NF , AP15P06DF , AP15P10D , AP16P01BF , AP16P02S , AP180N03D , 2N60 , AP180N10MP , AP18N03D , AP18P20P , AP1N10I , AP200N04NF , AP200N04TLG5 , AP200N10MP , AP200N15MP .

History: WSD30L20DN | AP80N06NF

 

 
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