AP18N03D Todos los transistores

 ..1. Size:1368K  cn apm
 ap18n03d.pdf

AP18N03D 30V N-Channel Enhancement Mode MOSFET Description The AP18N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =18A DS D R

 9.1. Size:57K  ape
 ap18n20ags-hf.pdf

AP18N20AGS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G rugge

 9.2. Size:99K  ape
 ap18n20gh-hf ap18n20gj-hf.pdf

AP18N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 170m Fast Switching Characteristics ID 18A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D

 9.3. Size:172K  ape
 ap18n20gs.pdf

AP18N20GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18A G RoHS Compliant & Halogen-Free S Description AP18N20 series are from Advanced Power innovated design and silicon process technology to achieve the lowes

 9.4. Size:94K  ape
 ap18n50w.pdf

AP18N50W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 500V Simple Drive Requirement RDS(ON) 0.27 Fast Switching Characteristic ID 20A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 9.5. Size:102K  ape
 ap18n20gp-hf ap18n20gs-hf.pdf

AP18N20GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G TO-22

 9.6. Size:155K  ape
 ap18n20gi.pdf

AP18N20GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, G D low on-resist

 9.7. Size:714K  cn apm
 ap18n20d ap18n20y.pdf

AP18N20DIY 200V N-Channel Enhancement Mode MOSFET Description The AP18N20D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.