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AP5N10BSI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP5N10BSI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 28.9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: SOT89
 

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AP5N10BSI Datasheet (PDF)

 ..1. Size:1365K  cn apm
 ap5n10bsi.pdf pdf_icon

AP5N10BSI

AP5N10BSI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10BSI uses advanced Trench technologyto provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS DR

 7.1. Size:1018K  cn apm
 ap5n10bi.pdf pdf_icon

AP5N10BSI

AP5N10BI100V N-Channel Enhancement Mode MOSFETDescriptionThe AP5N10BI uses advanced APM-SGTII technologyto provide excellent R , low gate charge andDS(ON)operation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protectionor in other Switching application.General FeaturesV = 100V I =5.0ADS DR

 8.1. Size:1712K  cn apm
 ap5n10mi.pdf pdf_icon

AP5N10BSI

AP5N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS DR

 8.2. Size:1620K  cn apm
 ap5n10si.pdf pdf_icon

AP5N10BSI

AP5N10SI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS DR

MOSTRAR MÁS

Otros transistores... AP50P04DF , AP50P10D , AP50P10NF , AP50P10P , AP55N10F , AP5N04MI , AP5N06MI , AP5N10BI , IRFB4110 , AP5N10MI , AP5N10SI , , , , , , .

History: AP5N10SI | AP5N10MI | AP5N06MI | AP5N04MI

 

 
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