AP6N12MI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6N12MI

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25.8 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: SOT23

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AP6N12MI datasheet

 ..1. Size:1499K  cn apm
 ap6n12mi.pdf pdf_icon

AP6N12MI

AP6N12MI 120V N-Channel Enhancement Mode MOSFET Description The AP6N12MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V I =6A DS D R

 9.1. Size:205K  ape
 ap6n100h.pdf pdf_icon

AP6N12MI

AP6N100H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 7.5A G RoHS Compliant & Halogen-Free S Description G AP6N100 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology to a

 9.2. Size:177K  ape
 ap6n100jv.pdf pdf_icon

AP6N12MI

AP6N100JV Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 7.5A G RoHS Compliant & Halogen-Free S Description AP6N100 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p

 9.3. Size:137K  ape
 ap6n1r7cdt.pdf pdf_icon

AP6N12MI

AP6N1R7CDT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D 100% Rg & UIS Test RDS(ON) 1.7m Ultra Low On-resistance G RoHS Compliant & Halogen-Free S Description PDFN 5x6 D D D D AP6N1R7C series are from Advanced Power innovated design and silicon process technology to achieve the l

MOSTRAR MÁS

Otros transistores... AP55N10F, AP5N04MI, AP5N06MI, AP5N10BI, AP5N10BSI, AP5N10MI, AP5N10SI, AP6N10MI, AO3400, AP6N40D, AP6P03SI, AP6P06MI, AP70N02DF, AP70N02NF, AP70N03NF, AP70N04NF, AP70N06HD