AP6N40D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6N40D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 32.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 94 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: TO252

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AP6N40D datasheet

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AP6N40D

AP6N40D 400V N-Channel Enhancement Mode MOSFET Description The AP6N40D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera

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 ap6n4r0i.pdf pdf_icon

AP6N40D

AP6N4R0I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 3.99m Lower On-resistance ID4 70A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N4R0 seriesare fromAdvanced Power innovated design an

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 ap6n4r2p.pdf pdf_icon

AP6N40D

AP6N4R2P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 60V Simple Drive Requirement RDS(ON) 4.2m Fast Switching Characteristic ID 115A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP6N4R2 seriesare fromAdvanced Power innovated d

Otros transistores... AP5N04MI, AP5N06MI, AP5N10BI, AP5N10BSI, AP5N10MI, AP5N10SI, AP6N10MI, AP6N12MI, IRFB4227, AP6P03SI, AP6P06MI, AP70N02DF, AP70N02NF, AP70N03NF, AP70N04NF, AP70N06HD, AP70N12D