AP6P06MI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6P06MI
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20.1 nS
Cossⓘ - Capacitancia de salida: 76 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de AP6P06MI MOSFET
- Selecciónⓘ de transistores por parámetros
AP6P06MI datasheet
ap6p06mi.pdf
AP6P06MI -60V P-Channel Enhancement Mode MOSFET Description The AP6P06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-6A DS D R
ap6p064i.pdf
AP6P064I Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID4 -17A G RoHS Compliant & Halogen-Free S Description AP6P064 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p
ap6p064j.pdf
AP6P064J Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description AP6P064 series are from Advanced Power innovated design and G D silicon process technology to achieve the low
ap6p064h.pdf
AP6P064H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17A G RoHS Compliant & Halogen-Free S Description AP6P064 series are from Advanced Power innovated design and G D S silicon process technology to achieve the l
Otros transistores... AP5N10BI, AP5N10BSI, AP5N10MI, AP5N10SI, AP6N10MI, AP6N12MI, AP6N40D, AP6P03SI, 10N60, AP70N02DF, AP70N02NF, AP70N03NF, AP70N04NF, AP70N06HD, AP70N12D, AP70N12NF, AP70P02D
History: AM4842N | SM4839NSK
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
2sb549 | 5n50 mosfet equivalent | a1016 transistor | a1693 transistor | a933 datasheet | c535 transistor | irf3205 reemplazo | mpsu06
