AP6P06MI Todos los transistores

 

AP6P06MI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP6P06MI
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20.1 nS
   Cossⓘ - Capacitancia de salida: 76 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
   Paquete / Cubierta: SOT23
 

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AP6P06MI Datasheet (PDF)

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 ap6p06mi.pdf pdf_icon

AP6P06MI

AP6P06MI -60V P-Channel Enhancement Mode MOSFET Description The AP6P06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-6A DS DR

 8.1. Size:181K  ape
 ap6p064i.pdf pdf_icon

AP6P06MI

AP6P064IHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID4 -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

 8.2. Size:168K  ape
 ap6p064j.pdf pdf_icon

AP6P06MI

AP6P064JHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design andGDsilicon process technology to achieve the low

 8.3. Size:204K  ape
 ap6p064h.pdf pdf_icon

AP6P06MI

AP6P064HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS -60V Simple Drive Requirement RDS(ON) 64m Fast Switching Characteristic ID -17AG RoHS Compliant & Halogen-FreeSDescriptionAP6P064 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the l

MOSTRAR MÁS

Otros transistores... AP5N10BI , AP5N10BSI , AP5N10MI , AP5N10SI , AP6N10MI , AP6N12MI , AP6N40D , AP6P03SI , 10N60 , AP70N02DF , AP70N02NF , AP70N03NF , AP70N04NF , AP70N06HD , AP70N12D , AP70N12NF , AP70P02D .

History: GSM3366W | JMTE060N06A | AP70N02DF

 

 
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