AP70N02NF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP70N02NF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 57 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 49 nS

Cossⓘ - Capacitancia de salida: 407 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: PDFN5X6-8L

 Búsqueda de reemplazo de AP70N02NF MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP70N02NF datasheet

 ..1. Size:1293K  cn apm
 ap70n02nf.pdf pdf_icon

AP70N02NF

AP70N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP70N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =70A DS D R

 7.1. Size:1310K  cn apm
 ap70n02df.pdf pdf_icon

AP70N02NF

AP70N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP70N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =70A DS D R

 8.1. Size:1530K  cn apm
 ap70n04nf.pdf pdf_icon

AP70N02NF

AP70N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP70N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =70 A DS D R

 8.2. Size:4048K  cn apm
 ap70n03df.pdf pdf_icon

AP70N02NF

AP70N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP70N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =70A DS D R

MOSTRAR MÁS

Otros transistores... AP5N10MI, AP5N10SI, AP6N10MI, AP6N12MI, AP6N40D, AP6P03SI, AP6P06MI, AP70N02DF, IRFB4115, AP70N03NF, AP70N04NF, AP70N06HD, AP70N12D, AP70N12NF, AP70P02D, AP70P03D, AP70P03DF