AP70N02NF Todos los transistores

 

AP70N02NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP70N02NF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 49 nS
   Cossⓘ - Capacitancia de salida: 407 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: PDFN5X6-8L
 

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AP70N02NF Datasheet (PDF)

 ..1. Size:1293K  cn apm
 ap70n02nf.pdf pdf_icon

AP70N02NF

AP70N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP70N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =70A DS DR

 7.1. Size:1310K  cn apm
 ap70n02df.pdf pdf_icon

AP70N02NF

AP70N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP70N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =70A DS DR

 8.1. Size:1530K  cn apm
 ap70n04nf.pdf pdf_icon

AP70N02NF

AP70N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP70N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =70 A DS DR

 8.2. Size:4048K  cn apm
 ap70n03df.pdf pdf_icon

AP70N02NF

AP70N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP70N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =70A DS DR

MOSTRAR MÁS

Otros transistores... AP5N10MI , AP5N10SI , AP6N10MI , AP6N12MI , AP6N40D , AP6P03SI , AP6P06MI , AP70N02DF , IRFB4115 , AP70N03NF , AP70N04NF , AP70N06HD , AP70N12D , AP70N12NF , AP70P02D , AP70P03D , AP70P03DF .

History: JMTQ240C03D | AP70N03NF | PJE8400 | PJC7404 | ME6874 | AP70N12NF | WFF12N65

 

 
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