AP70N12NF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:1653K cn apm
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AP70N12NF 120V N-Channel Enhancement Mode MOSFET Description The AP70N12NF uses advanced SGT II technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V I =70A DS DR

7.1. Size:1703K cn apm
ap70n12d.pdf pdf_icon

AP70N12D 120V N-Channel Enhancement Mode MOSFET Description The AP70N12D uses advanced SGT II technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V I =70A DS DR

9.1. Size:1530K cn apm
ap70n04nf.pdf pdf_icon

AP70N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP70N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =70 A DS DR

9.2. Size:4048K cn apm
ap70n03df.pdf pdf_icon

AP70N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP70N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =70A DS DR

9.3. Size:1310K cn apm
ap70n02df.pdf pdf_icon

AP70N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP70N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =70A DS DR

9.4. Size:2676K cn apm
ap70n03nf.pdf pdf_icon

AP70N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP70N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =70A DS DR

9.5. Size:1534K cn apm
ap70n06hd.pdf pdf_icon

AP70N06HD 60V N-Channel Enhancement Mode MOSFET Description The AP70N06HD uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =70A DS DR

9.6. Size:1293K cn apm
ap70n02nf.pdf pdf_icon

AP70N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP70N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =70A DS DR

AP70N12NF Datasheet (PDF)

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