AP70P03D Todos los transistores

 

AP70P03D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP70P03D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 255 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO252
 

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AP70P03D Datasheet (PDF)

 ..1. Size:1663K  cn apm
 ap70p03d.pdf pdf_icon

AP70P03D

AP70P03D -30V P-Channel Enhancement Mode MOSFET Description The AP70P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS DR

 0.1. Size:1495K  cn apm
 ap70p03df.pdf pdf_icon

AP70P03D

AP70P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70A DS DR

 7.1. Size:1611K  cn apm
 ap70p03nf.pdf pdf_icon

AP70P03D

AP70P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP70P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-70 A DS DR

 7.2. Size:1735K  cn apm
 ap70p03p ap70p03t.pdf pdf_icon

AP70P03D

AP70P03PIT -30V P-Channel Enhancement Mode MOSFET Description The AP70P03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-78A DS DR

MOSTRAR MÁS

Otros transistores... AP70N02DF , AP70N02NF , AP70N03NF , AP70N04NF , AP70N06HD , AP70N12D , AP70N12NF , AP70P02D , AO3400 , AP70P03DF , , , , , , , .

 

 
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