AP20N02BF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP20N02BF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 46 nS
Cossⓘ - Capacitancia de salida: 133 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Encapsulados: QFN2X2-6L
Búsqueda de reemplazo de AP20N02BF MOSFET
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AP20N02BF datasheet
ap20n02bf.pdf
AP20N02BF 20V N-Channel Enhancement Mode MOSFET Description The AP20N02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =20A DS D R
ap20n02df.pdf
AP20N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP20N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =20A DS D R
ap20n06s.pdf
AP20N06S 60V N-Channel Enhancement Mode MOSFET Description The AP20N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =20A DS D R
Otros transistores... AP70P03DF, AP20G03NF, AP20G04GD, AP20G04NF, AP20G06GD, AP20H02S, AP20H03NF, AP20H04NF, K3569, AP20N02DF, AP20N03D, AP20N06BD, AP20N06D, AP20N06S, AP20N10D, AP20P01BF, SSC8415GS6
History: DMN2990UFZ | 7N60L-TF3T-T
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