AP20N10D Todos los transistores

 

AP20N10D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP20N10D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25.8 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: TO252
 

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AP20N10D Datasheet (PDF)

 ..1. Size:1359K  cn apm
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AP20N10D

AP20N10D 100V N-Channel Enhancement Mode MOSFET Description The AP20N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =20A DS DR Type65m @ V =10V DS(ON) GSApplic

 8.1. Size:234K  ape
ap20n15agh.pdf pdf_icon

AP20N10D

AP20N15AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching,

 8.2. Size:94K  ape
ap20n15gh-hf.pdf pdf_icon

AP20N10D

AP20N15GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide theDS TO-252(H)designer with the best combination of fast

 8.3. Size:94K  ape
ap20n15agh-hf.pdf pdf_icon

AP20N10D

AP20N15AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

Otros transistores... AP20H03NF , AP20H04NF , AP20N02BF , AP20N02DF , AP20N03D , AP20N06BD , AP20N06D , AP20N06S , AO4407 , AP20P01BF , SSC8415GS6 , SSC8K21GN3 , SSC8K23GN2 , SSC8P20AN2 , SSC8P22AN3 , SSC8P22CN2 , .

 

 
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