AP20P01BF Todos los transistores

 ..1. Size:1198K  cn apm
 ap20p01bf.pdf

AP20P01BF -18V P-Channel Enhancement Mode MOSFET Description The AP20P01BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -18V I =-20A DS D R

 8.1. Size:80K  ape
 ap20p02gh ap20p02gj.pdf

AP20P02GH/J Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 52m Fast Switching ID -18A G S Description The Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast sw

 8.2. Size:2702K  cn apm
 ap20p02d.pdf

AP20P02D -20V P-Channel Enhancement Mode MOSFET Description The AP20P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R

 8.3. Size:1388K  cn apm
 ap20p02si.pdf

AP20P02SI -20V P-Channel Enhancement Mode MOSFET Description The AP20P02SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R

 8.4. Size:1216K  cn apm
 ap20p02bf.pdf

AP20P02BF -20V P-Channel Enhancement Mode MOSFET Description The AP20P02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS D R

 8.5. Size:1461K  cn apm
 ap20p03d.pdf

AP20P03D -30V P-Channel Enhancement Mode MOSFET Description The AP20P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-20 A DS D R

 8.6. Size:1428K  cn apm
 ap20p04d.pdf

AP20P04D -40V P-Channel Enhancement Mode MOSFET Description The AP20P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-20A DS D R

 8.7. Size:1417K  cn apm
 ap20p03df.pdf

AP20P03DF 30V P-Channel Enhancement Mode MOSFET Description The AP20P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-20A DS D R