AP3410MI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3410MI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.4 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.5 nS
Cossⓘ - Capacitancia de salida: 65 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de AP3410MI MOSFET
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AP3410MI datasheet
ap3410mi.pdf
AP3410MI 30V N-Channel Enhancement Mode MOSFET Description The AP3410MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6A DS D R
ap3416ai.pdf
AP3416AI 20V N-Channel Enhancement Mode MOSFET Description The AP3416AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS D R
ap3415a.pdf
AP3415A -20V P-Channel Enhancement Mode MOSFET Description The AP3415A uses advanced trench It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide var
Otros transistores... AP20N10D, AP20P01BF, SSC8415GS6, SSC8K21GN3, SSC8K23GN2, SSC8P20AN2, SSC8P22AN3, SSC8P22CN2, CS150N03A8, AP3415A, AP35H04NF, AP3N06I, AP3N06MI, AP3N10BI, AP3N50D, AP3P06AI, AP3P06BI
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