AP3410MI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP3410MI Datasheet (PDF)

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AP3410MI 30V N-Channel Enhancement Mode MOSFET Description The AP3410MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6A DS DR

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AP3416AI 20V N-Channel Enhancement Mode MOSFET Description The AP3416AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS DR

9.2. Size:1148K cn apm
ap3415a.pdf pdf_icon

AP3415A -20V P-Channel Enhancement Mode MOSFET Description The AP3415A uses advanced trench It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide var

Otros transistores... AP20N10D , AP20P01BF , SSC8415GS6 , SSC8K21GN3 , SSC8K23GN2 , SSC8P20AN2 , SSC8P22AN3 , SSC8P22CN2 , CS150N03A8 , AP3415A , AP35H04NF , AP3N06I , AP3N06MI , AP3N10BI , AP3N50D , AP3P06AI , AP3P06BI .