AP3N06MI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3N06MI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.42 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 148 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de AP3N06MI MOSFET
AP3N06MI Datasheet (PDF)
ap3n06mi.pdf
AP3N06MI 60V N-Channel Enhancement Mode MOSFET Description The AP3N06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =3A DS DR
ap3n06i.pdf
AP3N06I 60V N-Channel Enhancement Mode MOSFET Description The AP3N06I uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =3A DS DR
ap3n028ey.pdf
AP3N028EYHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETS Simple Drive Requirement BVDSS 30VD Lower Gate Charge D RDS(ON) 28m Fast Switching Performance ID 7AGD RoHS Compliant & Halogen-FreeDSOT-26DDescriptionAP3N028E series are from Advanced Power innovated design and siliconGprocess technology to ach
ap3n020p.pdf
AP3N020PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 23.3AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 seriesare fromAdvanced Power innovated designAP3N020series arefrom Advanced Power innovated de
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