AP3N06MI Todos los transistores

 

AP3N06MI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3N06MI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 148 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET AP3N06MI

 

AP3N06MI Datasheet (PDF)

 ..1. Size:1479K  cn apm
ap3n06mi.pdf pdf_icon

AP3N06MI

AP3N06MI 60V N-Channel Enhancement Mode MOSFET Description The AP3N06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =3A DS D R

 8.1. Size:1829K  cn apm
ap3n06i.pdf pdf_icon

AP3N06MI

AP3N06I 60V N-Channel Enhancement Mode MOSFET Description The AP3N06I uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =3A DS D R

 9.1. Size:71K  ape
ap3n028ey.pdf pdf_icon

AP3N06MI

AP3N028EY Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Simple Drive Requirement BVDSS 30V D Lower Gate Charge D RDS(ON) 28m Fast Switching Performance ID 7A G D RoHS Compliant & Halogen-Free D SOT-26 D Description AP3N028E series are from Advanced Power innovated design and silicon G process technology to ach

 9.2. Size:202K  ape
ap3n020p.pdf pdf_icon

AP3N06MI

AP3N020P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 23.3A G G RoHS Compliant & Halogen-Free S S Description AP4604 seriesare fromAdvanced Power innovated design AP3N020series arefrom Advanced Power innovated de

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