ATM2320KNSA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ATM2320KNSA20V N-Channel Enhancement Mode MOSFETDescriptionsThe ATM2320KNSA is N-Channel logic enhancement mode power field effect SOT-23transistor which is produced using high cell density advanced trench technologyto provide excellent R .DS(ON)This high density process is especially tailored to minimize on-state resistance.The device is particularly suited for low voltage appl

ATM2320KNSQ20V N-Channel Enhancement Mode MOSFETDescriptionsThe ATM2320KNSQ is N-Channel logic enhancement mode power field effecttransistor which is produced using high cell density advanced trench technologyto provide excellent R .DS(ON)This high density process is especially tailored to minimize on-state resistance.The device is particularly suited for low voltage application

ATM2312NSA N-CHANNEL ENHANCEMENT MODE POWER MOSFETDrain-Source Voltage: 20V Continuous Drain Current: 5.0A FEATURES SOT-23 Small PackageSOT-23 V =20V, I =5ADS DR 31.8m@V =4.5VDS(ON) GSR 35.6m@V =2.5VDS(ON) GS Advanced Trench TechnologyAPPLICATIONS D Load Switching for portable Application3 DC/DC Converter1 2 G SSchematic d

ATM2302BNSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 20V Drain Current: 3AFeatures Trench Power LV MOSFET technology High power and current handing capabilityR

ATM2305PSA P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage: -15V Drain Current: -5.6A Features Trench FET Power MOSFET Excellent RDS(on) and Low Gate Charge RDS(ON)( at VGS=-4.5V)36.4 mohm RDS(ON)( at VGS=-2.5V)53.0 mohm RDS(ON)( at VGS=-1.8V)62.0 mohm Applications Battery protection Load switch Power manag

ATM2301PSCP-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: -20V Drain Current: -3AFeatures Trench FET Power MOSFET Excellent R and Low Gate ChargeDS(on)R

ATM2301PSAP-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: -20V Drain Current: -2.5AFeatures Trench FET Power MOSFET Excellent R and Low Gate ChargeDS(on)R

ATM2306NSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 30V Drain Current: 3.16ADESCRIPTIONThe ATM2306NSA uses advanced trench technologyto provide excellent RDS(on) with low gate charge.This device is suitable for use as a load switch orDC/DC converter .FEATURESV =30V 1Gate 2Source 3DrainDS(V)SOT-23 Plastic PackageI =3.16ADR )47m@10V

ATM2302NSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 20V Drain Current: 3.3AFeatures Trench FET Power MOSFET Excellent R and Low Gate ChargeDS(on)R

ATM2310NSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 60V Drain Current: 3ADescriptionThe ATM2310NSA uses advanced trench technology to provideexcellent R , low gate charge and operation with gate voltagesDS(ON)as low as 2.5V.This device is suitable for use as Battery protectionor in other Switching application.Features High power and current h